国家/地区 中国（4）
IPC部 C（3） H（3）
IPC大类 H01（3） C30（2）
IPC小类 H01L（3） C30B（2）
IPC H01L021/02（3） C30B025/18（2） C30B029/40（2）
发明人 PAN Y（4）
公开年 2022（4）
申请年 2021（2）  2022（2） 
专利权人 CEC COMPOUND SEMICONDUCTOR CO LTD（4）

Preparation method of epitaxial structure of gallium nitride-based on power device, involves growing gallium-nitride cap layer on aluminum nitride gallium nitride potential barrier layer.

PAN Y, HE X, FENG H, TANG J

Preparing coating on carbon substrate e.g. crucible, involves mixing hydrogel and organosilane to form mixture, applying mixture to surface of carbon substrate to form first coating layer, coating organic tantalum solution on first coating to form second coating, and heating and annealing coating.

PAN Y, MA Y, PAN L, CHEN D

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing epitaxial structure for gallium nitride-based radio frequency device, comprises e.g. performing surface cleaning treatment, annealing the silicon carbide substrate to produce graphene film, growing indium-galliun-nitride-aluminum-gallium-nitride barrier layer.

PAN Y, FENG H, TANG J