国家/地区 中国（40）
IPC部 H（32） B（18） C（18）
G（9）
IPC大类 H01（32） C01（15） B82（14）
B01（3） C23（3） G01（3）
G03（3） H05（3） C08（2）
C25（2）
IPC小类 H01L（22） B82Y（14） C01B（14）
H01M（9） C23C（3） G03F（3）
B01J（2） C01G（2） C08K（2）
C25D（2） G01J（2） G01N（2）
H01B（2） H01J（2） H05B（2）
IPC H01L029/16（13） C01B031/04（12） B82Y030/00（8）
H01L029/06（7） H01L029/78（7） H01M004/62（7）
H01M010/052（7） B82Y040/00（5） C01B032/182（5）
H01L021/336（5） H01L029/66（5） H01L029/786（5）
H01L051/00（5） H01M004/36（5） H01M010/0525（5）
发明人 PARK S（40）
公开年 2016（10） 2017（7） 2014（5） 2015（4） 2018（4） 2021（3） 2022（3） 2013（2） 2023（2）
申请年 2015（9）  2016（8）  2017（6）  2014（4）  2013（3）  2020（3）  2021（3）  2012（2）  2022（2） 
专利权人 SAMSUNG ELEC.（21） LG CHEM LTD（5） PARK S（5） LG ENERGY SO.（4）
DONG JIN SEM.（3） LEE J（3） LG CHEM CO L.（3） BYUN K（2）
HEO J（2） ILJIN MATERI.（2） LG ELECTRONI.（2） SAMSUNG SDI .（2）
SHIN H（2） SNU R DB FO.（2） SONG H（2） UNIV HANYANG.（2）

Composite active material for forming anode, comprises core comprising silicon-containing structure and/or silicon-containing compound, and shell comprising carbonaceous material, and at least one metal oxide arranged in matrix of carbonaceous material, arranged on and conformed to surface of core.

SHIM K, MAH S, SON I, JO S, KIM G, PARK J, KAPYLOU A, LEE J, EUN S K, MAH S K, JO S N, KIM G S, WAN L J, SHIM K E, MA X G, SON I H, KIM K S, PARK J H, LEE J W, LI J, PARK S, JIN G, ZHAO S, MA X

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Semiconductor device has semiconductor structures with patterns, second conductive pattern that extends in second direction on gate insulation pattern, and second impurity region that is mounted on each of second semiconductor patterns.

HONG J, LEE K, PARK S, KIM I, KIM Y, KIM H, LI J, KIM I K, JIN R, KIM H C, PARK S H, LEE K H

Active material used for positive electrode of lithium secondary battery, is made of nickel-based lithium transition metal oxide, and comprises at least one secondary particles comprising aggregate of primary macroparticles, and coating layer comprising carbon material.

DO J, LHO E, PARK K, HAN G, KWAK M, PARK S, LEE D, LEE S, JUNG W, LHO E S, PARK K J, MIN K, PARK S M, LEE D J, LEE S O, JUNG W M, ZHENG W, LI S, LI D, HAN J, PARK G

Negative electrode for lithium-ion secondary battery comprises negative electrode current collector and negative electrode active material layer comprising negative electrode active material comprising lower layer facing surface of current collector and upper layer on lower layer.

LEE S, PARK S, SHIN S, LEE Y, CHOI J, LEE S M, PARK S M, SHIN S Y, LEE Y J, HYEON C, LI L, SHEN S, PIAO S

Coating composition used to form stacked structure, and manufacture display device comprises graphene oxide, and solvent.

SHIN H K, SEO D K, SIM J H, CHO W J, KANG B H, MOON S J, PARK S C, SEO H W, CHO J E, SHIN K S, SHIN H, SUH D, SHIM J H, KANGBYOUNGHUN, WON S H, EUN J J, SOON S, SHEN X, XU D, SHEN J, CAO Y, JIANG B, WEN S, PARK S, SEO H, CHO J, SHIN G

Electrode for use in a secondary battery of electric vehicle, comprises an electrode active material layer, which includes an electrode active material and a conductive material, and the conductive material includes graphene.

KIM T G, PARK S Y, LEE B R, CHO H M, YOO T G, KWAK M, KON K T, RAM L, MIN K, LIU T, CHO H, LEE B, PARK S, JIN T

Electrode for use in a secondary battery of electric vehicle, comprises an electrode active material layer, which includes electrode active material, and conductive material that has first conductive material and second conductive material.

KIM T G, PARK S Y, LEE B R, CHO H M, YOO T G, KWAK M, KON K T, RAM L, MIN K, LIU T, CHO H, LEE B, PARK S, JIN T

Semiconductor device comprises substrate comprising insulator and semiconductor comprising group IV material and/or group III-V compound, and graphene layer grown on surface of semiconductor.

SHIN K, SHIN H, CHO Y, NAM S, PARK S, LEE Y, SHIN K W, SHIN H J, CHO Y C, NAM S G, PARK S J, LEE Y S

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S