国家/地区 中国（3）
IPC部 H（3） B（2）
IPC大类 H01（3） B82（2）
IPC小类 H01L（3） B82Y（2）
IPC H01L029/16（3） H01L027/146（2） H01L051/00（2）
发明人 PASANEN P（3）
公开年 2011（2）
申请年 2011（2） 
专利权人 NOKIA CORP（3）

Photon sensing apparatus e.g. charge coupled device image sensor, for use in e.g. digital storage camera, has integrated graphene field effect transistor that is functioned as pre-amplifier for photodetecting structure.

VOUTILAINEN M, ROUVALA M, PASANEN P, PASANE P

Apparatus for sensing photons comprises photon sensing layers, which consists of graphene, arranged on top of each other and intermediate layer between each adjacent sensing layers.

VOUTILAINEN M, ROUVALA M, PASANEN P

Graphene-based apparatus e.g. integrated circuit has flat monolayer that is adjacent to flat surface of sacrificial substrate and transfer substrate that includes flat surface adjacent to other monolayer.

PASANEN P, VOUTILAINEN M K, VOUTILAINEN M