国家/地区 韩国（4）
IPC部 B（2） C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/02（2）
发明人 RHO J（4）
公开年 2014（4）
申请年 2013（3） 
专利权人 LG ELECTRONI.（4）

Thin film silicon solar cell manufacturing method, involves forming polycrystalline silicon on graphene by utilizing thin film structure, where amorphous silicon is heat-treated on graphene that is formed on metallic board.

RHO J, CHOI M, KIM T

Manufacturing method of silicon semiconductor element for organic LED, involves producing device structure using the polycrystalline silicon which is formed on graphene.

RHO J, CHOI M, KIM T

Manufacture of graphene involves forming graphene layer on catalyst metal layer, forming protective layer on graphene layer, positioning support layer on protective layer and then removing catalyst metal layer.

JUNG M, PARK W, RHO J, MOON J

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J