国家/地区 德国（3） 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/16（3） H01L029/66（2）
发明人 RUHL G（3）
公开年
申请年 2016（3）
专利权人 INFINEON TEC.（3）

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Method for manufacturing semiconductor component, involves providing carrier wafer and silicon carbide wafer, and bonding silicon carbide layer with carrier wafer during splitting process for forming graphene material on carbide layer.

RUHL G, SCHULZE H, LIPPERT G, ZIMMER T

Electronic device e.g. passive element, has dielectric structure whose first contact region and second contact region are configured to adjust electrical characteristics of two-dimensional material in contact surfaces of graphene layer.

KOENIG M, RUHL G, RUHR G