国家/地区 韩国（5） 美国（3） 中国（2）
IPC部 C（5） H（4）
IPC大类 C01（4） H01（4） C23（3）
IPC小类 C01B（4） C23C（3） H01L（3）
IPC C01B031/04（2） C01B032/186（2） C23C016/26（2）
H01L021/02（2）
发明人 SON M W（5）
公开年 2016（2）
申请年 2018（2） 
专利权人 GWANGJU INST.（4）

Anode active material comprises carbon material, and silicon structure attached to carbon material, where silicon structure includes silicon nanoparticle, metal thin film formed on surface of silicon nanoparticle, and graphene coated on surface of metal thin film.

KIM Y H, SON M W, KIM Y, SUN M

Manufacturing graphene directly on a substrate without transfer process used in semiconductore devices involves forming a catalyst layer on the substrate, using chemical vapor deposition to inject a carbon compound onto the catalyst layer.

HAM M, SON M W

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Producing multilayer graphene, comprises e.g. forming a catalytic metal layer on a substrate, supplying carbon source into a reactor, depositing a carbon thin film layer on catalytic metal layer, and forming a multilayer thin film.

HAM M H, SON M W, JANG J S