国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L045/00（3）
发明人 SONG Z（3）
公开年
申请年
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Graphene-phase change material structure comprises a phase change material layer, and a graphene layer is arranged on the top or bottom of the phase change material layer.

SONG Z, SONG W, ZHAO J, WU T

Phase change storage device with graphene layer has phase change material layer that is located on medium layer and upper electrode such that phase change thin film layer is arranged for contacting with graphene layer.

SONG Z, ZHU M

Graphene-containing electrode material preparation method for phase change memory, involves utilizing chemical dispersion process to prepare graphene nano material, and forming prepared graphene nano material into single layer graphene.

LV S, SONG Z