国家/地区 世界知识产权组织（4）
IPC部 C（4）
IPC大类 C01（3） C30（2）
IPC小类 C01B（3） C30B（2）
IPC C01B031/04（3） C01B031/00（2） C01B031/02（2）
C30B025/18（2） C30B029/02（2）
发明人 STRUPINSKI W（4）
公开年
申请年 2015（2） 
专利权人 MATERIALOW E.（3）

Production of graphene used in e.g. semiconductor surfaces by depositing carbon on substrate, involves providing substrate of wafer having crystalline layer of germanium with crystallographic orientation in reactor, and evoking gas flow.

PASTERNAK I, STRUPINSKI W

Transferring graphene film from source substrate onto target substrate involves marking selected region of graphene film on source substrate with waterproof binder to form closed frame around selected region.

KRAJEWSKA A, PASTERNAK I, STRUPINSKI W

Manufacture of microscopic graphene-containing grains used in e.g. supercapacitors, involves heating granules of copper, nickel or aluminum at specific conditions and cooling to room temperature under argon atmosphere.

STRUPINSKI W

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O