国家/地区 中国（3）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 WANG G（3）
公开年 2011（2）
申请年 2010（3）
专利权人

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Graphene for super capacitor and as conductive filling material comprises layers of graphene structure units on which a hole-shaped structure and a larger specific surface area are provided.

WANG G, GAO J, NING G

Preparation of platinum/graphene nanocatalyst by preparing graphene, preparing poly (diallyldimethylammonium chloride) functional graphene and loading platinum on graphene.

QIU J, WANG G, LIANG R, CUI S