国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/336（2） H01L029/16（2） H01L029/78（2）
发明人 WANG H（3）
公开年 2012（2）
申请年 2010（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（3）

Performing chemical modification of graphene used in preparation of graphene devices, by performing photochemical modification of graphene and substrate using pulsed laser patterning, and subjecting to atomic layer selective deposition.

LU W, XIA Y, CHENG S, ZHANG Q, WANG H, LI N

FET, has source and drain contact electrodes and graphene trench region that are linked together, where graphene trench region is formed on upper part of insulating substrate.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L

FET, has source/drain contact electrode and graphene trench region formed on insulating medium layer, where source contact and drain contact electrodes are respectively connected with graphene trench region.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L