国家/地区 中国（5）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG P（5）
公开年 2012（5）
申请年 2012（5）
专利权人 UNIV FUDAN（2）

Preparing photocatalyst comprises e.g. pre-treating commercial titanium dioxide, dispersing graphene oxide in deionized water to graphene oxide solution, and dispersing the pre-treated titanium dioxide into graphene oxide solution.

CAI H, DUAN H, WANG J, YU H, WANG P, YANG X, WANG X

Method for increasing high-k dielectric constant on graphene buffer layer utilized for manufacturing carbon-based integrated circuit, involves providing graphene thin film to grow high dielectric constant and preparing buffer solution.

SHEN Y, SUN Q, WANG P, ZHOU P, ZHANG W

Method for growing high k dielectric for e.g. use in nanoscale preparation of planar device, involves using zinc oxide seed layer to prepare zinc oxide thin film on graphene film by using electron beam vacuum evaporation.

SHEN Y, SUN Q, WANG P, ZHOU P, ZHANG W

Heat transfer of graphene film by growing thick copper foil on graphene thin film, fixing copper foil on target substrate, slowly pushing down thermal transfer printing roller to transfer copper foil on graphene film to target substrate.

DONG C, NIE A, WANG H, WANG P, ZHOU W

High molecular graphene composite material with positive resistor temperature coefficient comprises a substrate, and conductive filler.

JIAN X, LI H, LIU H, TAO W, WANG P