国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WANG X（3）
公开年 2012（3）
申请年 2011（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（3）

Graphene oxide doped zinc oxide nanometer thin film manufacturing method, involves absorbing-coating mixed solution on sensitive membrane of device and drying in vacuum to obtain graphene doped zinc oxide nanometer film.

HOU C, HUO Z, LI D, LIU M, LONG S, YAN X, WANG X, ZHANG M, XIE C, ZHOU W

Method for forming graphene-metal Ohmic contact region, involves performing electronic beam evaporation or sputtering process on surface of sample by deposition of metals and peeling off surface of sample and drain of photoresist.

CHEN J, GUO J, JIN Z, MA P, PAN H, PENG S, WANG X

Method for preparing substrate of graphene thin film semiconductor device, involves providing metal catalyst layer with substrate, and forming tape clipping layer and adhesive tape layer on organic colloid layer.

GUO J, JIN Z, MA P, WANG X