国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC
发明人 WANG Z（4）
公开年 2010（4）
申请年 2009（2）  2010（2） 
专利权人 UNIV CHINA E.（2）

Graphene field effect transistor comprises a substrate gate, a lower gate dielectric material, graphene, a source and a drain electrode, where the lower gate dielectric material is positioned on the surface of the substrate gate.

LI Y, LIU X, CHEN Y, WANG Z, HAO X

Transferring of graphene thin film for graphene semiconductor device involves coating organic colloid layer on surface of graphene thin film through spin coating and drying organic colloid layer coated on surface of graphene tin film.

CHEN Y, LIU X, LI Y, WANG Z

New graphene doped with nitrogen atom used for catalyst carrier, lithium ion battery and conductive film, is prepared by using direct-current electric arc process.

GU Z, LI N, SHI Z, WANG Z

Method for preparing nitrogen-doped graphene involves mixing nitro-containing organic explosive, providing into sealed stainless steel reactor, heating, cooling and discharging gases.

FENG S, JIA R, WANG Z, ZHAO J, ZHENG J, ZHU Z