国家/地区 美国（6）
IPC部 H（5） C（3） B（2）
IPC大类 H01（5） B01（2） C01（2）
IPC小类 H01L（3） B01J（2） C01B（2）
H01M（2）
IPC C01B031/04（2）
发明人 WEI C（6）
公开年
申请年 2015（2） 
专利权人 METAL IND RE.（2）

Method for manufacturing backside illuminated image sensor device, involves forming dielectric buffer layer on patterned conductive shielding layer, forming color filter layer on buffer layer, and forming microlens layer on filter layer.

JENG C, HUANG Z, WEI C, CHANG S, CHIEN V

Initiating graphene oxide through reduction by reductant to controllably release organic compounds involves mixing certain amount of graphene oxide with certain concentration of buffer solution to prepare stock solution.

ZHU D, WANG B, WEI C

Manufacturing negative plate of secondary battery, involves providing multiple sheets of functional graphene, and compressing functional graphene to faun graphene target.

HUANG C, CHIU S, CHU C, CHUANG Y, WANG C, WEI C, HUANG J, QIU S, ZHU J, ZHUANG Y, WANG Z, WEI J, WANG J

Graphene oxide cathode zinc ion battery for e.g. mobile phones, has isolating membrane being provided between positive electrode and negative electrode, and anode being provided with current collector and attached on current collector.

WEI C

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Method for manufacturing semiconductor device, involves forming grid medium layer between graphene-containing layer and exposed seed layer using photo resist as mask and forming gate metal on gate dielectric medium to remove photo-resist.

WEI C, LI J, LIU Q, FENG Z, WANG J, HE Z