国家/地区 中国（5）
IPC部 B（3） C（2） H（2）
IPC大类 B82（2） H01（2）
IPC小类 B82Y（2） H01L（2）
IPC
发明人 WEI Z（5）
公开年 2011（3） 2012（2）
申请年 2011（5）
专利权人 UNIV PEKING（3） UNIV CHANGCH.（2）

Carbon-based nanometer material transistor preparing method, involves leading electrodes at two ends of carbon nanometer tube, and depositing conductive material at two ends of graphene for forming electrode.

CAO Y, CUI X, ZHANG X, HUANG R, FU Y, ZHAO H, WEI Q, WEI Z, YIN J

Method for manufacturing graphene transistor, involves transferring graphene to upper part of groove structure of carbon nano-tube, and educing conductive materials deposited on two ends of graphene.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Method for processing nanometer scale figure at graphite or surface of graphene for processing food, involves etching graphite or graphene to form groove to obtain designed processing pattern.

FU Y, LI P, WEI Q, WEI Z, ZHANG C, ZHAO H

Preparing graphene material using laser heating device, comprises e.g. annealing nickel film plated on substrate placed on quartz tube and regulating laser optical path and parameters on laser, injecting argon and hydrogen and heating.

FANG F, FANG X, HAN Z, LI J, TAN X, WANG F, WANG X, WANG Y, WEI Z, CHEN F, FANG D, GAO X, CHU X, NIU S, TANG J

Preparation of graphene material involves plating nickel membrane on substrate, adjusting optical path and parameter of laser, introducing argon gas and hydrogen gas, opening the laser, and introducing methane as reaction precursor source.

FANG F, WANG X, CUI Y, WANG F, LI J, WEI Z, FANG X, LUO T