国家/地区 中国（6）
IPC部 H（4） C（3） B（2）
G（2）
IPC大类 H01（4） B82（2） C01（2）
G09（2）
IPC小类 H01L（4） B82Y（2） C01B（2）
G09F（2）
IPC C01B031/04（2） G09F009/30（2） H01L029/78（2）
H01L051/00（2） H01L051/52（2） H01L051/56（2）
发明人 XU D（6）
公开年 2011（2） 2021（2）
申请年 2020（2） 
专利权人 SAMSUNG DISP.（2） SAMSUNG ELEC.（2）

Manufacturing display apparatus involves preparing support substrate, forming metal oxide layer on surface of support substrate, metal oxide layer comprises first charges, and forming debonding layer on surface of metal oxide layer.

SIM J, SHIN H, KIM H, SEO D, XU D, SHEN X, SHEN J, SUH D, KIM H S, SHIM J H

Coating composition used to form stacked structure, and manufacture display device comprises graphene oxide, and solvent.

SHIN H K, SEO D K, SIM J H, CHO W J, KANG B H, MOON S J, PARK S C, SEO H W, CHO J E, SHIN K S, SHIN H, SUH D, SHIM J H, KANGBYOUNGHUN, WON S H, EUN J J, SOON S, SHEN X, XU D, SHEN J, CAO Y, JIANG B, WEN S, PARK S, SEO H, CHO J, SHIN G

Preparation of large-sized graphene involves ultrasonically treating mixture of graphite and concentrated sulfuric acid to obtain solution comprising upper graphene and lower concentrated sulfuric acid solution, and processing graphene.

FENG C, XU D

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

Graphene base FET preparing method, involves utilizing nucleating layer and water as oxidant to be reacted with hafnium source, and generating hafnium oxide grid medium layer on graphene layer.

CHENG X, HE D, WANG Z, XIA C, XU D, YU Y, ZHANG Y

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H