国家/地区 中国（3）
IPC部 C（3）
IPC大类 C08（2）
IPC小类 C08F（2） C08L（2）
IPC C08F220/14（2）
发明人 XU X（3）
公开年 2012（3）
申请年 2011（3）
专利权人 UNIV GUILIN .（2）

Buffer layer of epitaxial gallium nitride grapheme structure for light emitting diode, comprises silicon carbide substrate; graphene-containing layer as buffer layer and gallium nitride epitaxial layer; and nitride layer.

LI S, QU S, SHAO H, XU X, WANG C

Grafting terminal amino hyper-branched polymer with graphene oxide modified epoxy resin, by adding water and distilled water to graphite oxide, adding triethylene tetramine, and slowly adding methanol to reacting solution.

GUO D, LEE S, LIU K, LU S, LUO C, XU X

Preparing artificial bone material for medical use, by dispersing graphene oxide in acrylic acid, adding pyridine and methyl (meth)acrylate, adding initiator for performing addition polymerization and cooling polymerized product.

GUO D, XU X, LIU K