国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/78（3） H01L021/336（2）
发明人 YIN H（3）
公开年 2012（2）
申请年 2011（3）
专利权人 INST MICROEL.（3）

Diamond-like semiconductor substrate source/drain buried type graphene transistor device for small size and high frequency integrated circuit, has insulating medium layer arranged on upper part of metal gate electrode.

MA X, YIN H

Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.

YIN H, LUO Z, ZHU H

Method for manufacturing semiconductor device, involves forming graphene layer on insulating layer, forming gate structure on graphene layer, and forming doped region in semiconductor substrate.

LUO Z, YIN H, ZHU H