国家/地区 中国（6）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6） B22F（3） C22C（2）
IPC B22F009/04（2） C22C001/05（2）
发明人 ZHANG C（6）
公开年 2021（6）
申请年 2021（6） 
专利权人

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Surface treatment method of metal plate has paving powder of surface reinforcing material and multiple sheet material on metal plate, covering the cover plate, placing explosive on cover plate and removing cover plate after detonating explosive.

DUAN J, ZHANG X, ZHANG C, ZHANG Y, CHENG C, HUANG T, LIU H, ZHOU Y, FENG J, WANG X, GUO X, SONG K, LI S

Increasing nitrogen content of vanadium iron nitride used for e.g. high-strength thread steel, involves mixing vanadium source, carbonaceous reducing agent, iron powder, and tin dioxide, ball milling, vacuumizing, introducing mixed gas of nitrogen and ammonia and heating.

ZHANG C

Preparing shape memory alloy based composite smart material used in e.g. electronic communication and civil building field comprises e.g. adding carbon black, graphene, carbon particle, carbon nanofiber or carbon nanotube to shape-memory alloy mixture powder, mixing and drying mixed material.

WEI T, ZHANG C, HU Y, SU C, YANG J

Self-supporting graphene wall electrode has hollow structure of graphene wall micro-tube, whose one end is tightly inserted in graphene wall micro-tube and other end passes through graphene wall micro-tube tantalum wire.

LI M, ZHANG C, LI H, LENG Y, LI C

Graphene-copper target material comprises target assembly includes outer copper back plate provided with groove and graphene copper target main body whose outer wall provided with graphene plating layer.

LI G, ZHANG C