国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/182（3） C01B032/184（3） C01B032/188（2）
C01B032/19（2） C01B032/194（2） C01B032/196（2）
发明人 ZHANG T（4）
公开年 2022（3）
申请年 2021（2） 
专利权人 HON HAI PREC.（4） UNIV TSINGHU.（4） HONGFUJIN PR.（2）

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Method for preparing FET e.g. junction FET, involves providing interdigital electrode on graphene nanoribbon composite structure, where electrode covers set of protrusions and is electrically connected to set of graphene nano-ribbons.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Preparing graphene nanoribbon composite structure, comprises e.g. providing substrate comprising protrusions arranged at intervals, growing graphene film on growth substrate, and setting adhesive layer on surface of graphene film.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Making graphene adhesive film by growing graphene on copper sheet growth substrate, depositing adhesive layer on surface of graphene away from growth substrate and removing growth substrate by etching growth substrate with etching solution.

ZHANG T, HUANG Z, XIAO X, WANG Y, LI Q, FAN S