国家/地区 中国（7） 美国（2）
IPC部 B（4） C（4） H（3）
D（2）
IPC大类 B82（3） H01（3） C08（2）
D01（2）
IPC小类 B82Y（2） C08J（2） C08K（2）
C08L（2） D01F（2）
IPC B82Y040/00（2） C08K003/04（2） D01F001/09（2）
发明人 ZHOU H（9）
公开年 2015（2） 2020（2） 2021（2）
申请年 2021（3）  2015（2）  2020（2） 
专利权人 ZHOU H（9）

Reticulate back glue graphene heating comprises graphene heating film main body, where film body graphene heating a film layer, and graphene of heating film layer is provided with second net pattern adhesive layer.

ZHOU H

Graphene heating efficiency testing device for detecting commercial heating device, has clamping arm whose outer side is provided with clamping groove, where inner spring of groove is connected with hook sheet.

ZHOU H

Composite modifier for e.g. grinding tool, has two-dimensional material e.g. white graphene, graphene oxide or montmorillonite, and fiber material e.g. mullite fiber, glass fiber, aramid fiber, ceramic fiber or carbon fiber.

ZHOU H

Preparing platinum-tin dioxide modified N-doped porous graphene ethanol fuel cell catalyst involves adding graphene oxide to deionized water, dispersing by ultrasonic, placing in hydrothermal reaction device, washing graphene oxide hydrogel.

ZHOU H

Polyurethane conductive and heat-generating carbon film comprises polyurethane resin, conductive carbon black, graphene, lubricant, dispersant, and solvent.

ZHOU H

Graphene-containing conductive masterbatch comprises fiber forming polymer, graphite, electro-conductive carbon black, coupling agent, dispersing agent, antioxidant and lubricant.

ZHOU H

Preparing solid phase graphene electric conduction dispersion, comprises dissolving carbon nano tube aqueous dispersant solution in distilled water, ultrasonically treating, centrifuging, dispersing, adsorbing, drying and pulverizing.

ZHOU H

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Preparing silicon intercalated epitaxial monolayer graphene comprises growing large scale high-quality graphene on metal surface, depositing silicon on the prepared epitaxial graphene and annealing to high temperature.

GAO H, PAN Y, GAO M, MAO J, HUANG L, ZHOU H, WANG Y, GUO H, DU S