国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/186（3）
发明人 ZHOU T（3）
公开年
申请年
专利权人

Method for preparing single-layer alternating graphene, involves placing copper foil in gas phase deposition furnace, introducing argon gas into gas phase deposition furnace, and introducing hydrogen into gas phase deposition furnace and annealing copper foil.

ZHANG X, ZHOU T, XU X

Preparing graphene film by carbon dioxide combined low pressure chemical vapor deposition comprises cleaning the metal substrate and placing into a reaction furnace for vacuumizing and performing high temperature annealing treatment.

LI X, ZHAO B, ZHANG Q, YANG X, WANG R, ZHOU T, WANG C, YUAN L

Method for preparing nanoporous copper composite material, involves preparing nanoporous copper composites by depositing structure containing graphene layer on nanoporous copper layer into impregnation solution and sintering.

KANG J, WANG Y, ZHOU T, QIAO Z, ZHANG Z, YU Z