国家/地区 中国（6）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4）
IPC小类 H01M（2）
IPC H01M004/36（2） H01M004/58（2）
发明人 ZHOU Z（6）
公开年 2018（2） 2020（2）
申请年 2020（3）  2018（2） 
专利权人 UNIV CHINA ELECTRONIC SCI TECHNOLOGY（6）

Preparation of solvent-free graphene-polyurethane self-repairing material involves preparing graphene nitromethylpyrrolidone solution, ultrasonicating, centrifuging, taking supernatant, and adding polytetrahydrofuran.

XIE H, MA J, WANG K, ZHOU Z, ZHANG J, WANG Y

Preparing material of elemental sulfur-rich nickel cobalt sulfide and graphene comprises preparing graphene oxide solution, dissolving e.g. nickel salt, ultrasonically stirring, adding urea and annealing.

WANG Y, ZHANG J, CHEN Z, LV H, ZHOU Z, ZHAO Y

Preparation of near-infrared thermal repair flexible conductive film involves preparing silver nanowire-graphene composite material using e.g. ferric chloride, mixing with e.g. thermoplastic polyurethane, forming into film, and drying.

WANG Y, ZHOU Z, ZHAO Y, WANG K, LIN K, ZHANG X

Composite material, comprises graphene, cobalt oxide nanorods and nickel molybdenum oxide nanorods, where graphene and cobalt oxide nanorods combined with rod structure are grown in situ on graphene substrate.

WANG Y, CHEN Z, ZHANG J, YAN X, ZHOU Z, LV H

Composition material comprises e.g. core layer of composition material i.e. a ternary iron-manganese sulfide of rod-type structure, ternary iron-manganese sulfide graphene layer is coated on outside, and ternary iron-manganese sulfide.

WANG Y, PENG Z, CHEN Z, ZHANG J, YAN X, ZHOU Z, LV H

Preparation of zinc-tin-sulfur/graphene oxide composite used for semiconductor photocatalyst, involves mixing and dispersing graphene oxide, copper compound, zinc compound, tin compound and sulfur compound in carrier solution.

LI Y, LI H, ZHANG P, WANG Z, WU J, ZHOU Z, LIN Y