国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 ZHU H（2）
公开年
申请年 2010（2）
专利权人

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T

Preparation of graphene and amorphous carbon composite film involves chemical deposition by filling amount of pyridine to anoxic reactor, and separation and purification by etching copper substrate located at lower layer.

LI C, ZHU H, WEI J, WANG K, WU D, LI X