国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 ZHU H（3）
公开年
申请年 2021（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G