国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2） C23C（2）
IPC C01B031/04（2） C23C016/26（2）
发明人 ZONG Z（3）
公开年 2014（3）
申请年 2013（3）
专利权人 SHANGHAI CEC.（3）

Graphene thin film preparation device includes working cavity, carbon source entrance, residual gas inner exit, substrate, screening electric field pole plate, screening electric field electrode and accelerating electric field pole plate.

MA Y, NIU S, TATACHENKO V, YAN S, ZONG Z

Forming thin graphene film involves heating graphene growth substrate in high temperature area, applying accelerating and screening electric fields in anode, then heating, introducing carbonaceous gas and screening negatively charged ions.

YAN S, ZONG Z, MA Y, NIU S, TATACHENKO V

Preparing graphene thin film involves providing graphene growth substrate and then placing substrate in high temperature region.

YAN S, ZONG Z, MA Y, NIU S, TATACHENKO V