国家/地区 美国（2） 世界知识产权组织（2）
IPC部 B（3） C（3） H（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC B01J019/08（3）
发明人
公开年
申请年
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Graphene producing device has cathode and anode which are configured to create arc discharge producing flux stream, and to deposit material from flux stream on substrate.

KEIDAR M, SHASHURIN A

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A