国家/地区 世界知识产权组织（3）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3） C01B（3） B82Y（2）
C23C（2） H01L（2）
IPC B01J019/08（3）
发明人
公开年 2012（3）
申请年 2011（3） 
专利权人

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Electrochemical process for synthesis of graphene in the form of ribbons, layers and urchins from carbon nanotubes, by dispersing carbon nanotubes in ethanol, oxidizing nanotubes in conducting solution by applying a positive potential.

SHINDE D B, PILLAI V K, PILLAI V, SHINDE D