国家/地区 韩国（4） 美国（4） 世界知识产权组织（3） 中国（2）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B01J（5）
IPC B01J019/24（5）
发明人
公开年 2012（2）
申请年 2012（2） 
专利权人

Modification of graphene involves obtaining graphene having desired crystal size by repeating graphene modification process several times with subcritical or supercritical carbon dioxide.

DO S H, LEE J S, JEON S Y, KONG J H, DO SEUNG H, DO S, LEE J, JEON S, KONG J

Apparatus for forming graphene layer used in manufacture of nanoscale graphene semiconductor device, has graphite segment separated from support stand by relative motion, and substrate that is adhered to the separated graphite segment.

LEE Y S, KIM J H

Apparatus useful for exfoliation of graphene, comprises chamber having through-hole formed at its one surface, cylinder which receives graphite and volatile material, clamp disposed in chamber, and operation mechanism connected with clamp.

BAEK J B, JEON I Y

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W