国家/地区 韩国（4） 美国（2） 世界知识产权组织（2）
IPC部 B（4） C（4）
IPC大类 B01（4） C01（4） C23（3）
IPC小类 B01J（4）
IPC B01J023/755（4）
发明人
公开年 2013（4）
申请年 2012（4）
专利权人

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Manufacture of graphene involves forming graphene layer on one-way direction from graphene seed layer, forming graphene seed layer, forming heating source light, and supplying carbon source on graphite catalyst layer.

BEOM K G, YONG C S, JU K G, KIM K B, CHO S Y, KIM K J

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Manufacture of graphene for, e.g. organic LEDs, involves preparing structure with graphene on surfaces and catalyst, arranging carriers on graphene, and removing catalyst while winding up carriers by rotating rolls facing each other.

KIM N, RYU J, YEONG K N, CHEOL R J, KIM N Y, RYU J C