国家/地区 欧洲专利局（EPO）（4）
IPC部 B（4）
IPC大类 B32（4） C01（4） B82（3）
B05（2） H01（2）
IPC小类 B32B（4） C01B（4） B82Y（3）
B05D（2） H01L（2）
IPC B32B003/00（4）
发明人
公开年
申请年
专利权人 SAMSUNG ELEC.（2）

Production of graphene hybrid material for electronic devices e.g. microsupercapacitor, involves exposing precursor material and associating pseudocapacitive material with laser-induced graphene which is derived from precursor material.

TOUR J M, LI L, PENG Z, ZHANG J, TOUR J

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Graphene sheet used in e.g. field emission display, liquid crystal display, organic light emitting device, super-capacitor, field-effect transistor, or memory device comprises graphene containing ten or fewer wrinkles of the grapheme.

YOON S, CHOI J, CHOI W, SHIN H, YOON S M, CHOI J Y, CHOI W M, SHIN H J

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W