国家/地区 中国（3）
IPC部 B（3）
IPC大类 B82（3） C01（3）
IPC小类 B82Y（3）
IPC B82Y040/00（3）
发明人 CHEN L（3）
公开年 2018（2）
申请年 2017（3）
专利权人

Preparation of high quality graphene or two-dimensional metal carbide crystal vertical heterostructure material includes using bimetal laminate of upper copper foil or underlying metal foil as growth substrate, heating, growing and etching.

REN W, XU C, CHEN L, CHENG H

Preparing tumor-targeting graphene quantum dot used for treating tumor, by reacting hydrazine and nitric acid, resuspending trinitronaphthalene in aqueous ammonia, performing ultrasonic reaction and covalently linking quantum dot.

QI L, CHENG R, LIN D, PAN T, YANG M, CHEN L, YAO Q, ZHANG L, DAI L

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X