国家/地区 韩国（6）
IPC部 C（6）
IPC大类 C01（6） H01（4） B32（3）
B01（2） B29（2） C08（2）
IPC小类 C01B（6）
IPC C01B031/00（6）
发明人
公开年 2015（6）
申请年 2014（4） 
专利权人 UNIV SUNGKYU.（2）

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Manufacture of doped reduced graphene oxide involves dispersing graphene oxide in organic solvent, adding boron trifluoride etherate, alkyl thiol, aryl thiol, alkyl amine or arylamine to dispersed graphene oxide, and processing.

LEE H

Conductive carbon used in material for forming electrodes, comprises hydrophilic solid-phase component having preset microcrystal size in graphene surface direction calculated from Raman spectrum.

ISHIMOTO S, KUBOTA S, MINATO Y, NAOI K, NAOI W, TAMAMITSU K

Graphite-type carbon raw material used as graphene precursor, has rhombohedral system graphite layer and hexagonal system graphite layer in ratio more than preset value, as measured using peak intensities specific planes of layers.

HASEGAWA S, KAMIYA N, SHOJI H, NAGISA K, HASEGAWA SHOJI, KAMIYA NAGISA, SHEN Y

Composite panel comprises a layer of material comprising a polymeric matrix material, and a large area graphene sheet embedded in the layer of material, where the large area graphene sheet includes nanoperforations.

BULLOCK S E, NEWELL C M

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V