国家/地区 美国（17）
IPC部 C（17）
IPC大类 C01（17） H01（9） B82（4）
B01（3） C08（3） C09（3）
B32（2） C30（2）
IPC小类 C01B（17） H01B（5） B82Y（4）
H01G（4） B01J（3） C08L（3）
H01M（3） B32B（2） C08K（2）
C09C（2） C30B（2） H01L（2）
IPC C01B031/00（17）
发明人 JANG B Z（2） LEE H（2） ZHAMU A（2）
公开年 2015（9） 2014（8）
申请年 2014（17）
专利权人 JANG B Z（2） NANOTEK INST.（2） SEKISUI CHEM.（2） SEKISUI CHEM.（2）
UNIV SUNGKYU.（2） ZHAMU A（2）

Converting carbon dioxide into graphene useful in energy storage and electronics, comprises contacting metal with gaseous carbon dioxide, and irradiating surface of metal with laser beam to convert carbon dioxide into graphene.

ZHAO C, DONG J, HUANG Y, QIAN X

Producing graphitic film used in electronic device, comprises mixing graphene platelets with carbon precursor polymer and liquid, removing liquid from wet film, carbonizing precursor polymer composite film and thermally treating the film.

ZHAMU A, JANG B Z

Method for producing bulk highly oriented graphene structure that is utilized in thermal management device e.g. heat dissipation plate, involves preparing graphene oxide dispersion, and dispensing and depositing graphene oxide dispersion.

ZHAMU A, JANG B Z, WANG Y, FU L

Manufacture of doped reduced graphene oxide involves dispersing graphene oxide in organic solvent, adding boron trifluoride etherate, alkyl thiol, aryl thiol, alkyl amine or arylamine to dispersed graphene oxide, and processing.

LEE H

Conductive carbon used in material for forming electrodes, comprises hydrophilic solid-phase component having preset microcrystal size in graphene surface direction calculated from Raman spectrum.

ISHIMOTO S, KUBOTA S, MINATO Y, NAOI K, NAOI W, TAMAMITSU K

Graphite-type carbon raw material used as graphene precursor, has rhombohedral system graphite layer and hexagonal system graphite layer in ratio more than preset value, as measured using peak intensities specific planes of layers.

HASEGAWA S, KAMIYA N, SHOJI H, NAGISA K, HASEGAWA SHOJI, KAMIYA NAGISA, SHEN Y

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Method for preparing graphite oxide and graphene for optoelectronics fields, involves providing cathode current to graphite electrode to initiate plasma electrolytic process at surface of graphite electrode in contact with electrolyte.

WEI K, DANG V T, DANG V, WEI K H

Preparation of large-piece graphene for e.g. electronic material involves performing layer inserting treatment on graphite powder under mild condition and presence of acid and oxidizing agent, and washing with dilute hydrochloric acid.

BAI Y, HU X, SHA X, SHA Y

Manufacturing reduced graphene oxide, comprises obtaining reduced graphene oxide laminate by reducing prepared dispersion liquid, dispersing reduced graphene oxide laminate in an aqueous solvent to obtain multilayered reduced graphene oxide.

LEE H