国家/地区 欧洲专利局（EPO）（31）
IPC部 B（31）
IPC大类 B82（31） C01（31） H01（20）
B32（12） C23（10） B05（9）
C08（9） C09（6） C30（6）
C07（5） B01（4） B44（3）
C25（3） B21（2） C03（2）
IPC小类 C01B（31）
IPC C01B031/02（31）
发明人 VEERASAMY V（4） VEERASAMY V S（4） KIM J（3）
BAE S K（2） CHOI J（2） CHOI J Y（2）
CHOI W（2） CHOI W M（2） GANG B S（2）
GEUN K H（2） HONG B H（2） HUI H B（2）
KIM H K（2） KIM J E（2） KIM T（2）
公开年 2011（31）
申请年 2010（12）  2011（12）  2009（7） 
专利权人 GUARDIAN GLA.（4） GUARDIAN IND（4） GUARDIAN IND.（4） SAMSUNG ELEC.（4）
BAYER TECHNO.（2） GRAPHENE SQU.（2） SUH K S（2） UNIV MANCHES.（2）
UNIV RICE WI.（2） UNIV SINGAPO.（2） UNIV SINGAPO.（2） UNIV SUNGKYU.（2）
VEERASAMY V .（2）

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y

Producing two-dimensional nano-materials, useful in sensors, comprises adding sol precursor compound to mixture of graphene oxide particles or graphene particles and surfactant, reacting mixture in sol-gel process, and optionally heating.

IVANOVICI S, YANG S, FENG X, MUELLEN K, BIN Y S, KLAUS M

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Transparent electrode for optoelectronic applications e.g. organic photovoltaics and organic light emitting devices, comprises a grid structure, a graphene film associated with the grid structure, and a substrate.

TOUR J M, ZHU Y, TOUR J, SUN Z, YAN Z, RUAN G, PENG Z

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K