国家/地区 日本（5）
IPC部 B（5）
IPC大类 B82（5）
IPC小类 B82Y（5）
IPC B82Y040/00（5）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（3）
申请年 2009（2）  2012（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V