国家/地区 欧洲专利局（EPO）（3）
IPC部 C（3） B（2）
IPC大类 C01（3） C30（3） C23（2）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人 COJOCARU C（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 CENT NAT RECH SCI（3）

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C