国家/地区 欧洲专利局（EPO）（3）
IPC部 B（3）
IPC大类 B82（3） C01（3） H01（3）
B81（2） C23（2）
IPC小类 B82Y（3）
IPC B82Y030/00（3）
发明人 ZENASNI A（2）
公开年 2013（2）
申请年 2011（3）
专利权人 CENT NAT REC.（2） COMMISSARIAT.（2）

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C