国家/地区 美国（3） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 C（4）
IPC大类 C01（4） H01（3） C23（2）
IPC小类 C01B（4）
IPC C01B032/182（4）
发明人 LEE E（4）
公开年 2021（3）
申请年 2021（4）
专利权人 SAMSUNG ELEC.（3）

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Measuring thickness of graphene layer grown on silicon substrate by using X-ray photoelectron spectroscopy device comprises obtaining signal intensities from graphene layer to emit X-ray radiation and calculating thickness of graphene layer.

LEE E, CHO Y, KIM S, BYUN K, SONG H, SHIN H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Silicon-silicon composite oxide-carbon composite used for negative electrode active material for lithium secondary battery, comprises core-shell structure comprising core comprising silicon, silicon oxide compound, and magnesium silicate, and shell comprising carbon layer, and has preset span value.

LEE E, PARK H, LIM S W, OH S M, LIM J C, HUNSOO P, IMSUNGWOO, LIM J