国家/地区 美国（3） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/184（5）
发明人
公开年 2022（3） 2023（2）
申请年 2022（5）
专利权人

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Lithium or sodium-based battery used for e.g. portable electronic device, comprises anode at least partially covered on its side facing electrolyte by at least one artificial solid-electrolyte interphase layer with layer(s) of porous graphene with pores having preset average characteristic width.

CHOI K, HEIGHT M J

Preparing reduced graphene film used as active material for energy storage, preferably lithium-ion battery, involves using polyvinyl alcohol as additive, reducing graphene oxide with metal, and forming layer of graphene film on metal surface.

ZHANG S, LI T, ZHAO H, LI C, WANG R