国家/地区 中国（4）
IPC部 B（4）
IPC大类 C01（4） H01（3） B01（2）
B82（2） C23（2） G03（2）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人 LEE E（4）
公开年
申请年
专利权人 SAMSUNG ELEC.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacture of graphene used in manufacture of electric device, involves contacting hydrogen gas with metal catalyst, contacting metal catalyst with hydrocarbon gas, nitrogen gas, or inert gas, and forming graphene on metal catalyst.

CHO K W, LEE H C, LEE E H, CHO K, LEE E, LEE H, LI E

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T