国家/地区 中国（2） 台湾（2） 美国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/188（3）
发明人 ZHANG L（3）
公开年 2022（2）
申请年
专利权人 HON HAI PREC.（2） UNIV TSINGHU.（2）

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Preparing graphene nanoribbon composite structure, comprises e.g. providing substrate comprising protrusions arranged at intervals, growing graphene film on growth substrate, and setting adhesive layer on surface of graphene film.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Preparing epitaxial graphene, by putting silicon carbide substrate into deposition chamber of laser chemical vapor deposition equipment, turning on laser to irradiate substrate and adjusting laser power to reduce substrate temperature.

TU R, ZHANG S, ZHANG L