国家/地区 世界知识产权组织（5） 美国（4） 中国（3） 欧洲专利局（EPO）（2） 日本（2） 韩国（2）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC C01B032/188（5）
发明人
公开年
申请年
专利权人

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Laminate used for electronic device, comprises graphene film and base portion comprising silicon carbide, and has ion mass distribution in stack depth direction obtained by using bismuth ions as primary ions and cesium ions as sputter ions.

MITSUHASHI F, TATENO Y, ADACHI M, YAMAMOTO Y

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V