国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/188（4）
发明人
公开年 2020（3）
申请年 2019（4）
专利权人

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G

Preparing epitaxial graphene, by putting silicon carbide substrate into deposition chamber of laser chemical vapor deposition equipment, turning on laser to irradiate substrate and adjusting laser power to reduce substrate temperature.

TU R, ZHANG S, ZHANG L

Preparing single-layer graphene comprises taking single crystal silicon carbide substrate, heating, annealing and inserting metal in atoms under buffer layer.

HUI X, HU T, YANG D, MA F, MA D, XU K

Heteromorphic porous graphene useful in supercapacitor electrode material, conductive filler material, biosensing material, sewage treatment comprises structural units formed by graphene nanosheets, linearly distributed vermicular nanopores.

YAN X, SU L