国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） C30（2）
IPC小类 C01B（4） C30B（2）
IPC C01B032/188（4）
发明人
公开年 2021（4）
申请年 2020（3） 
专利权人

Preparing gas selective separation filter involves providing graphene membrane on sacrificial support layer, subjecting graphene membrane to transient pressurized ozone gas pulse, purging ozone, and cooling down ozone treated graphene membrane.

AGRAWAL K V, HUANG S, HSU K, AGRAWAL K, HWANG S, HUSH K, XU G

Method for growing flat graphene with uniform layer thickness, comprises e.g. pyrolyzing silicon carbide on silicon carbide wafer under ultra-high vacuum conditions by controlling temperature of silicon carbide wafer.

ZHANG Y, JIN S, WANG C

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Preparing wafer-level single crystal copper foil comprises cutting edges of polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing in hydrogen atmosphere to obtain single crystal copper foil.

LI Y, LI L, CHEN Z, SU C, TIAN B