国家/地区 日本（6） 美国（6） 世界知识产权组织（6） 欧洲专利局（EPO）（5） 韩国（5） 中国（4） 澳大利亚（2） 加拿大（2） 台湾（2）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 C01B（6）
IPC C01B032/194（6）
发明人
公开年 2015（4） 2014（2）
申请年 2014（6）
专利权人

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Production of graphene involves forming liquid dispersion comprising dispersing agent, and carbon-based material comprising de-oxidized graphite, and continuously passing liquid dispersion through high-pressure homogenizer.

YOO K H, SOHN K N, KWON W J, LEE K S, YOO K, SOHN K, KWON W, LEE K

Modification of graphene involves obtaining graphene having desired crystal size by repeating graphene modification process several times with subcritical or supercritical carbon dioxide.

DO S H, LEE J S, JEON S Y, KONG J H, DO SEUNG H, DO S, LEE J, JEON S, KONG J

Electron microscopy support, useful for receiving biological sample e.g. serum, plasma and saliva, comprises support member, and partially hydrogenated graphene attached to member, where member is attached to support film.

RUSSO C J, PASSMORE L A, RUSSO C, PASSMORE L

Synthesis of nanoporous graphene and photo luminescent graphene quantum dots used for e.g. gas separation, involves preparing mixture by dispersing graphene in hydrogen peroxide, filtering mixture, drying residue and dialyzing filtrate.

KURUNGOT S, PALANISELVAM T, PLANISELVAM T, THANGAVELU P

Method for forming nanopore in graphene membrane in liquid environment, involves applying nanopore diameter tuning voltage pulse between membrane surfaces if electrical conductance is greater than prespecified electrical conductance.

GOLOVCHENKO J A, LU B, KUAN A T, GOLOVCHENKO J, KUAN A