国家/地区 韩国（3）
IPC部 B（3） C（3） G（2）
IPC大类 C01（3） B01（2） G03（2）
IPC小类 C01B（3）
IPC C01B032/194（3）
发明人 KIM H（3）
公开年 2022（3）
申请年
专利权人 KOREA ELECTR.（2）

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Transferring graphene comprises growing graphene layer on first substrate, forming water-soluble support layer on graphene layer, forming coating layer on water-soluble support layer, attaching heat release tape, and transferring.

LEE J, KIMSEUNGIL, KIM H