国家/地区 欧洲专利局（EPO）（3）
IPC部 B（3） C（3） H（2）
IPC大类 B01（3） C01（3） H01（2）
IPC小类 B01J（3）
IPC C01B031/02（3）
发明人
公开年 2015（3）
申请年 2014（3） 
专利权人

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Graphene comprises oxygen atom content in predetermined range, and has carbon/oxygen weight ratio of predetermined range.

LEE J S, DO S H, JEON S Y, KONG J H, DO SEUNG H, LEE J, DO S, JEON S, KONG J

Electron microscopy support, useful for receiving biological sample e.g. serum, plasma and saliva, comprises support member, and partially hydrogenated graphene attached to member, where member is attached to support film.

RUSSO C J, PASSMORE L A, RUSSO C, PASSMORE L