国家/地区 中国（5）
IPC部 C（5）
IPC大类 C04（5）
IPC小类 C04B（5）
IPC C04B035/58（5）
发明人
公开年 2018（2）
申请年 2021（2） 
专利权人

Ceramic structure for forming component of plasma processing apparatus, contains silicon carbide, silicon carbonitride, titanium carbide or titanium carbonitride as main component, and two main surfaces having different carbon concentration.

HAMASHIMA H

Preparing graphene-doped magnesium diboride bulk material by mixing melamine or carbon nitride with magnesium powder, vacuuming, ball milling, passing argon gas, pumping it until impurity gas is removed, heating, mixing and grinding with magnesium powder and boron powder, pressing and sintering.

TANG J

Preparing molybdenum disilicide-three-dimensional graphene complex material useful in wave absorbing material or stealth material comprises preparing graphene oxide aqueous solution, three-dimensional graphene hydrogel and drying.

LIU R, ZHAO Z, LI Y, PING Y, FU L, SHANG Y

Nitrogen-sulfur co-doped graphene composite silicon-boron carbon-nitrogen ceramic composite material useful as cathode material in lithium ion battery.

LUO H, KONG J, HOU Y, TANG Y

Method for forming ceramic matrix composite structure, involves providing mixture of carbon nanotubes, graphene, and silicon carbon nitride, heating mixture to bond carbon nanotubes and graphene, and sintering carbon nitride in mixture.

BRALEY D J, BELK J H, BRELEY D J, BRALEY D Y, BELK Y H