国家/地区 中国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C014/06（3）
发明人 DING G（3）
公开年
申请年
专利权人 SHANGHAI INS.（2）

Preparing aluminum-metal composite material for vertically growing graphite comprises cleaning base material, growing titanium layer on surface of substrate, washing, growing graphene layer, subjecting to post-powder metallurgy process, processing into uniform workpiece and performing each test.

DING G, TIAN S

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z